PART |
Description |
Maker |
TGI8596-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
MAGX-003135-120L00 MAGX-003135-120L00-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
MGF0840G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
MAGX-000912-125L00 MAGX-000912-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|